FinHEMT: FinFET-based high electron mobility transistor with strained silicon channel

摘要

We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high on-current (> 1 mA/μm) and low off-current (~10 pA/μm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cmWs, which is 4 times higher than that of FinFET.