首页>
外国专利>
Strained silicon carbide channel for electron mobility of NMOS
Strained silicon carbide channel for electron mobility of NMOS
展开▼
机译:应变碳化硅沟道用于NMOS的电子迁移率
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor is formed on a (110) silicon (Si) substrate, with improved electron mobility. Embodiments include semiconductor devices having a silicon carbide (SiC) portion in the nFET channel region. An embodiment includes forming an nFET channel region and a pFET channel region in a Si substrate, such as a (110) Si substrate, and forming a silicon carbide (SiC) portion on the nFET channel region. The SiC portion may be formed by ion implantation of C followed by a recrystallization anneal or by epitaxial growth of SiC in a recess formed in the substrate. The use of SiC in the nFET channel region improves electron mobility without introducing topographical differences between NMOS and PMOS transistors.
展开▼