Carrier Injection Mechanism of Metal-MoS2 Ohmic Contact in MoS2 FETs

摘要

In order to enhance the carrier injection of MoS₂ field effect transistors (FETs,) understanding the injection mechanism of metal MoS₂ contacts is essential. In this work, MoS₂ (FETs) with Ti and Sc electrodes were fabricated and characterized, respectively. The carrier injection mechanism was studied from the perspective of the tunneling models. With the narrower barrier width, the MoS₂ contact shows a different injection mechanism from that of MoS₂, making Sc a promising improvement as MoS₂ FETs electrodes.