首页> 外文期刊>Applied Physics Letters >Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
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Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

机译:Mn 5 Ge 3 C 0.8 / Al 2 O 3自旋注入的Hanle效应测量-接触Si上简并掺杂的Ge沟道

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摘要

We report electrical spin injection and detection in degenerately doped n-type Ge channels using MnGeC/AlO-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
机译:我们报告使用自旋注入和检测的MnGeC / AlO / n-Ge隧道接触在退化掺杂的n型Ge通道中进行电自旋注入和检测。整个结构集成在Si晶圆上,以实现互补的金属氧化物半导体兼容性。从三端Hanle效应测量中,我们观察到自旋累积达到10 K,使用洛伦兹拟合在T = 4 K时将自旋寿命提取为38 ps,并且由于自旋扩散长度估计为367 nm。高掺杂锗通道的高扩散系数。

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