ESD device performance analysis in a 14nm FinFET SOI CMOS technology: Fin-based versus planar-based

摘要

We present ESD device results from a 14nm FinFET SOI CMOS technology. Both fin-based and planar-based approaches are evaluated, with the planar-based diode design achieving 7 times higher failure current per silicon area. Planar-based diodes also show 25% higher failure current when Tsi increases by 40%.