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Electrical Overstress/Electrostatic Discharge Symposium
Electrical Overstress/Electrostatic Discharge Symposium
召开年:
2015
召开地:
Reno, NV(US)
出版时间:
-
会议文集:
-
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1.
Self-ESD-protected transmission line broadband in CMOS28nm UTBB-FDSOI
机译:
CMOS28nm UTBB-FDSOI中具有自我防静电保护的传输线宽带
作者:
Bourgeat Johan
;
Lim Tekfouy
;
Heitz Boris
;
Jimenez Jean
;
Galy Philippe
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
CMOS integrated circuits;
electrostatic discharge;
integrated circuit reliability;
silicon-on-insulator;
thyristors;
CMOS;
UTBB-FDSOI;
bidirectional SCR;
embedded SCR;
self ESD protected transmission line broadband;
size 28 nm;
ultrathin body and BOX fully depleted silicon-on -insulator;
BiCMOS integrated circuits;
Capacitance;
Electrostatic discharges;
Junctions;
Radio frequency;
Transmission line measurements;
Trigger circuits;
2.
Versatile models and expanded application of the IEC 61000-4-2 test
机译:
IEC 61000-4-2测试的多功能模型和扩展应用
作者:
Maloney Timothy J.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
IEC standards;
electrostatic discharge;
immunity testing;
IEC 61000-4-2 test;
IEC pulser;
all-purpose circuit model;
input-output port hazards;
radiation modeling;
shorting current waveform expression;
zero field derivative;
Analytical models;
Capacitance;
Couplings;
Hidden Markov models;
IEC;
IEC Standards;
Integrated circuit modeling;
3.
ESD characterization of diodes and ggMOS in Germanium FinFET technologies
机译:
锗FinFET技术中二极管和ggMOS的ESD表征
作者:
Boschke Roman
;
Linten Dimitri
;
Hellings Geert
;
Shih-Hung Chen
;
Scholz Mirko
;
Mitard Jerome
;
Witters Liesbeth
;
Collaert Nadine
;
Thean Aaron
;
Groeseneken Guido
会议名称:
《》
|
2015年
关键词:
Ge-Si alloys;
MOSFET;
electron mobility;
electrostatic discharge;
elemental semiconductors;
failure analysis;
germanium;
semiconductor diodes;
thermal conductivity;
ESD characterization;
Ge;
SiGe;
channel material;
failure current;
gated diode;
germanium FinFET technology;
ggMOS;
high mobility material;
silicon;
thermal conductivity;
Electrostatic discharges;
FinFETs;
Logic gates;
Resistance;
Silicon;
Silicon germanium;
4.
Analysis of Pulsed DC ionizer measurement procedures with a CPM Using ESDA RP 3.11-2006
机译:
使用ESDA RP 3.11-2006的CPM分析脉冲直流电离器的测量程序
作者:
Levit Lawrence
;
Vosteen William
;
Weil Geoffrey
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
SPICE;
corona;
integrated circuit measurement;
voltage dividers;
CPM;
ESDA RP 3.11-2006;
charge plate monitor;
corona ionizers;
pulsed DC ionizer measurement procedures;
Atmospheric modeling;
Corona;
Discharges (electric);
Integrated circuit modeling;
Pulse measurements;
SPICE;
Voltage measurement;
5.
Wear out effects in ESD characterization and testing
机译:
磨损ESD表征和测试中的影响
作者:
Smedes Theo
;
Abessolo-Bidzo Dolphin
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
CMOS integrated circuits;
electrostatic discharge;
failure analysis;
hidden Markov models;
integrated circuit reliability;
integrated circuit testing;
wear;
CDM;
CMOS;
ESD characterization;
HMM;
complementary metal oxide semiconductor;
electrostatic discharge testing;
failure level;
stress;
very-fast transmission-line pulsing;
vf-TLP;
wear out effect;
Degradation;
Electrostatic discharges;
Hidden Markov models;
Metals;
Qualifications;
Silicides;
Stress;
6.
A passive coupling circuit for injecting TLP-like stress pulses into only one end of a driver/receiver system
机译:
一种无源耦合电路,用于将类似TLP的应力脉冲注入驱动器/接收器系统的一端
作者:
Orr Benjamin
;
Johnsson David
;
Domanski Krzysztof
;
Gossner Harald
;
Pommerenke David
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
circuit simulation;
coupled circuits;
integrated circuit testing;
passive networks;
transmission lines;
TLP-like stress pulse;
characterization pulse;
circuit simulation;
circuit testing;
directional current injection;
driver-receiver system;
passive coupling circuit;
simple passive circuit;
transmission line pulsing;
Current measurement;
Current transformers;
Inductance;
Integrated circuit modeling;
Load modeling;
Voltage measurement;
Windings;
7.
Probabilistic analytical benchmarking for ESDS manufacturing process
机译:
ESDS制造过程的概率分析基准
作者:
Koh L.H.
;
Goh C.B.
;
Goh Y.H.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
manufacturing processes;
semiconductor device manufacture;
ESD failure control threshold;
ESD sensitive devices;
ESDS manufacturing process;
chronological ESD process analysis;
premature failure;
probabilistic analytical benchmarking;
probabilistic statistical technique;
quantitative ESD risk indices;
semiconductor manufacturers;
Benchmark testing;
Electrostatic discharges;
Ionization;
Probabilistic logic;
Production facilities;
Reliability;
8.
Debug and prediction of EOS events using long duration Transmission Line Pulse (TLP) measurements
机译:
使用长时间传输线脉冲(TLP)测量来调试和预测EOS事件
作者:
Clarke Dave
;
Heffernan Stephen
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
CMOS integrated circuits;
electrostatic discharge;
failure analysis;
transmission lines;
EOS events;
electrical overstress;
long duration transmission line pulse measurements;
Earth Observing System;
Electrostatic discharges;
Metals;
Power supplies;
Rails;
Stress;
Thyristors;
9.
The effect of USB ground cable and product dynamic capacitance on IEC61000-4-2 qualification
机译:
USB接地电缆和产品动态电容对IEC61000-4-2认证的影响
作者:
Tamminen Pasi
;
Ukkonen Leena
;
Sydanheimo Lauri
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
capacitance;
electromagnetic compatibility;
electrostatic discharge;
telecommunication cables;
IEC61000-4-2 qualification;
USB ground cable;
discharge stress levels;
energy transfer;
ground connections;
peak current;
peak power;
product dynamic capacitance;
pulse rise time;
Capacitance;
Current measurement;
Discharges (electric);
Electrostatic discharges;
Ferrites;
Solid modeling;
Universal Serial Bus;
10.
CDM-reliable T-coil techniques for high-speed wireline receivers
机译:
CDM可靠的T线圈技术,用于高速有线接收器
作者:
Min-Sun Keel
;
Rosenbaum Elyse
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
coils;
electrostatic discharge;
hazards;
magnetic circuits;
CDM-reliable T-coil techniques;
ESD;
T-coil circuits;
bandwidth degradation;
high-speed wireline receivers;
inductance halving;
inherent CDM hazard;
magnetic coupling;
voltage overshoot;
Bandwidth;
Couplings;
Electrostatic discharges;
Inductance;
Parasitic capacitance;
Receivers;
Resistors;
11.
Engineering of dual-direction SCR cells for component and system level ESD, surge, and longer EOS events
机译:
双向SCR电池的工程设计,用于组件和系统级ESD,电涌和更长的EOS事件
作者:
Tazzoli Augusto
;
Vashchenko Vladislav
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
thyristors;
EOS events;
bidirectional SCR;
component level ESD;
dual-direction SCR cells;
surge transients;
system level ESD;
Electrostatic discharges;
Hidden Markov models;
Layout;
Stress;
Surge protection;
Surges;
Thyristors;
12.
Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies
机译:
先进的UTBB FDSOI技术创新型高密度ESD保护设备
作者:
Fonteneau Pascal
;
Solaro Yohann
;
Marin-Cudraz David
;
Legrand Charles-Alexandre
;
Fenouillet-Beranger Claire
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
leakage currents;
silicon-on-insulator;
thyristors;
Si;
bottom bulk-thyristor;
high current capability;
innovative high-density ESD protection device;
leakage current;
stacked devices;
state of the art UTBB FDSOI technology;
top thin film triggering device;
tunable triggering voltage;
Anodes;
Current measurement;
Electrostatic discharges;
Junctions;
Leakage currents;
Logic gates;
Thyristors;
13.
A comprehensive ESD verification flow at transistor level for large SoC designs
机译:
大型SoC设计的晶体管级全面ESD验证流程
作者:
Lescot Jerome
;
Dehan Patrice
;
Boujarra Wahbi
;
Medhat Dina
;
Billy Sophie
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
integrated circuit design;
system-on-chip;
comprehensive ESD verification flow;
final debugging process;
initial power domains configuration;
large SoC designs;
transistor level;
Electrostatic discharges;
Engines;
Layout;
SPICE;
System-on-chip;
Topology;
Transistors;
14.
An off-chip ESD protection for high-speed interfaces
机译:
高速接口的片外ESD保护
作者:
Notermans Guido
;
Ritter Hans-Martin
;
Utzig Joachim
;
Holland Steffen
;
Zhihao Pan
;
Wynants Jochen
;
Huiskamp Paul
;
Peters Wim
;
Laue Burkhard
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
low-power electronics;
peripheral interfaces;
HDMI2.0 high-speed interfaces;
USB3.1 high-speed interfaces;
bipolar process;
fast-switching protection;
low-voltage clamping protection;
off-chip ESD protection;
signal integrity;
voltage 15 kV;
Capacitance;
Clamps;
Electrostatic discharges;
Junctions;
Metals;
Substrates;
Thyristors;
15.
ESD and disturbance cases in electrostatic protected areas
机译:
静电保护区的ESD和干扰情况
作者:
Tamminen Pasi
;
Viheriakoski Toni
;
Ukkonen Leena
;
Sydanheimo Lauri
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
assembling;
electromagnetic interference;
electronics industry;
electrostatic discharge;
EPA;
ESD control programs;
ESD events;
ESD failures;
charged operators;
electrical disturbances;
electronic assembly environments;
electrostatic discharge;
electrostatic protected areas;
Assembly;
Electromagnetic interference;
Electrostatic discharges;
Integrated circuits;
Noise;
Radio frequency;
Testing;
16.
A full-chip ESD simulation flow
机译:
全芯片ESD仿真流程
作者:
Poon Steven S.
;
Sreedhar Kushal
;
Joshi Chinmay
;
Escalante Marco
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
integrated circuit design;
integrated circuit modelling;
integrated circuit reliability;
ESD protection devices;
chip capacitance;
chip power;
full-chip ESD simulation flow;
silicon area;
Capacitance;
Clamps;
Electrostatic discharges;
Integrated circuit interconnections;
Integrated circuit modeling;
MOS devices;
Resistance;
17.
EOS characterization methodology applied to disable feature of ESD power clamps
机译:
EOS表征方法学用于禁用ESD功率钳位功能
作者:
Loayza Jorge
;
Guitard Nicolas
;
Jacquier Blaise
;
Dray Alexandre
;
Agarwal Divya
;
Batra Vicky
;
Allard Bruno
;
Phung Luong Viet
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
elemental semiconductors;
field effect transistors;
rectifiers;
silicon;
BigFET-based power clamps;
EOS characterization methodology;
ESD power clamps;
IC robustness;
SCR-based power clamps;
Si;
electrical overstress;
silicon-controlled rectifier;
Clamps;
Earth Observing System;
Electrostatic discharges;
Integrated circuits;
Robustness;
Thyristors;
Trigger circuits;
18.
ESD failure caused by parasitic SCR in an overvoltage tolerant I/O
机译:
耐压I / O中的寄生SCR引起的ESD故障
作者:
Alvarez D.
;
Wendel M.
;
Stuffer A.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
CMOS integrated circuits;
electrostatic discharge;
failure analysis;
thyristors;
CMOS embedded flash technology;
ESD failure;
high voltage devices;
overvoltage tolerant I/O;
parasitic SCR;
CMOS integrated circuits;
Current measurement;
Electrostatic discharges;
Resistors;
Stress;
Thyristors;
Voltage measurement;
19.
ESD induced functional upset in magnetic sensor ICs
机译:
ESD引起的磁传感器IC功能异常
作者:
Dibra Donald
;
Esmark Kai
;
Jahn Stefan
;
Motz Mario
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
automotive electronics;
electrostatic discharge;
magnetic sensors;
ESD induced functional upset;
ESD system level tests;
ISO 10605 standard;
automotive applications;
magnetic sensor IC;
supply voltage drop capability;
Discharges (electric);
Electrostatic discharges;
Magnetic sensors;
Magnetomechanical effects;
Sensor systems;
Stress;
20.
ESD protection design in active-lite interposer for 2.5 and 3D systems-in-package
机译:
用于2.5和3D封装系统的有源精简插入器中的ESD保护设计
作者:
Scholz Mirko
;
Hellings Geert
;
Shih-Hung Chen
;
Linten Dimitri
;
Detalle Mikael
;
Neve Cesar Roda
;
Shibkov A.
;
La Manna Antonio
;
Van Der Plas Geert
;
Beyne Eric
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
system-in-package;
2.5 systems-in-package;
3D systems-in-package;
ESD protection design;
active-lite interposer;
low-cost front-end processing;
passive interposer process flow;
stacked die;
Anodes;
Capacitance;
Cathodes;
Electrostatic discharges;
Silicidation;
Silicides;
Stress;
21.
ESD protection of open-drain I2C using fragile devices in embedded systems
机译:
使用嵌入式系统中的易碎器件对漏极开路I2C进行ESD保护
作者:
Farbiz Farzan
;
Ali Muhammad Y.
;
Sankaralingam Raj
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
embedded systems;
failure analysis;
ESD protection;
device failure current;
embedded systems;
fragile devices;
open-drain Isup2/supC;
open-drain outputs;
output transistor;
standard characterization;
Current measurement;
Discharges (electric);
Electrostatic discharges;
Impedance;
MOS devices;
Probes;
Transmission line measurements;
22.
A novel new concept in hybrid alpha ionization systems
机译:
混合α电离系统中的新概念
作者:
Levit Lawrence
;
Weil Geoffrey
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
capacitors;
ionisation chambers;
plastics;
wiring;
alpha ionization system;
capacitor;
hard wiring;
ionizer invention;
plastic window;
process chamber;
pulsed high voltage bias ionizer;
Discharges (electric);
Electrodes;
Fault location;
Ionization;
Plastics;
Windows;
23.
Practical HBM testing with statistical pin combinations
机译:
具有统计销钉组合的实用HBM测试
作者:
Stadler Wolfgang
;
Niemesheim Josef
;
Guerses Huelya
;
Hilbricht Oliver
;
Boroni Andrea
;
Ballarin Giuseppe
;
Grund Evan
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electronics packaging;
electrostatic discharge;
integrated circuit testing;
practical HBM testing;
statistical pin combinations;
statistically determined pin pairs;
stress count;
stress time;
Electrostatic discharges;
Integrated circuits;
Pins;
Qualifications;
Standards;
Stress;
Testing;
24.
Practical methodology for the extraction of SEED models
机译:
提取SEED模型的实用方法
作者:
Reiman Collin
;
Thomson Nicholas
;
Yang Xiu
;
Mertens Robert
;
Rosenbaum Elyse
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
IEC standards;
electrostatic discharge;
integrated circuit design;
transmission lines;
ESD gun zaps;
IEC 61000-4-2 discharge;
SEED model;
TLP characterization;
custom test board;
external pins;
integrated circuit;
pin-level response;
system-efficient ESD design;
transmission line pulse;
Current measurement;
Electrostatic discharges;
Pins;
Pulse measurements;
Semiconductor device measurement;
Transmission line measurements;
Voltage measurement;
25.
A new full-chip verification methodology to prevent CDM oxide failures
机译:
防止CDM氧化物故障的新的全芯片验证方法
作者:
Etherton Melanie
;
Ruth Scott
;
Miller James W.
;
Agarwal Rishabh
;
Bhooshan Rishi
;
Ershov Maxim
;
Cadjan Meruzhan
;
Feinberg Yuri
;
Srinivasan Karthik
;
Chang Norman
;
Youlin Liao
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
driver circuits;
electrostatic discharge;
integrated circuit modelling;
CDM current distribution;
CDM oxide failures;
CDM risk;
charged device model;
complete integrated circuits;
driver-receiver pairs;
full-chip CDM ESD verification method;
grid resistance;
robust analysis;
Discharges (electric);
Electrostatic discharges;
Integrated circuit modeling;
Logic gates;
Receivers;
Resistance;
26.
How Six Sigma brought saving and improved manufacturing process by 98.9
机译:
六个西格玛如何带来98.9%的节省和改进的制造工艺
作者:
Drab Kamil
;
Kwiatkowski Mariusz
;
Wasalaski Philip
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
assembling;
customer satisfaction;
six sigma (quality);
3M EM Eye ESD event detector device;
EOM customer satisfaction;
Six Sigma methodology;
electronic assembly line;
manufacturing process;
production process;
Assembly;
Detectors;
Electrostatic discharges;
Electrostatic measurements;
Electrostatics;
Fasteners;
Fixtures;
27.
Robust ESD clamp for Envelop Tracking power supply
机译:
坚固的ESD钳位器,用于信封跟踪电源
作者:
Chaudhry Iqbal
;
Peachey Nathaniel
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
power supply circuits;
trigger circuits;
ESD event;
envelop tracking power supply;
important clamp features;
reliable power up operation;
reliable trigger mechanism;
robust ESD clamp;
voltage spikes;
Clamps;
Electrostatic discharges;
Integrated circuit modeling;
Latches;
Logic gates;
Power supplies;
Threshold voltage;
28.
3D integration ESD protection design and analysis
机译:
3D集成ESD保护设计与分析
作者:
Mitra Souvick
;
Gebreselasie Ephrem
;
You Li
;
Gauthier Robert
;
Silberman Joel
;
Tyberg Christy
;
Sakuma Katsuyuki
;
Tran-Quinn Thuy
;
Ramachandran Koushik
;
Angyal Matthew
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
bonding processes;
design of experiments;
electrostatic discharge;
integrated circuit testing;
3D integration ESD protection;
DOE matrix;
chip bonding;
circuit performance;
complex 3D integration process;
design of experiments;
fail probability;
functionality test;
leakage test;
pass-fail criteria;
Bonding;
Electrostatic discharges;
Receivers;
Semiconductor device measurement;
Testing;
Three-dimensional displays;
Topology;
29.
Fast circuit simulator for transient analysis of CDM ESD
机译:
快速电路仿真器,用于CDM ESD的瞬态分析
作者:
Kuo-Hsuan Meng
;
Rosenbaum Elyse
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
circuit simulation;
electrostatic discharge;
transient analysis;
circuit-level CDM ESD simulation;
cluster computing;
fast circuit simulator;
reduced run-time;
transient analysis;
Computational modeling;
Convergence;
Electrostatic discharges;
Integrated circuit modeling;
Mathematical model;
Resistors;
Transient analysis;
30.
Secondary discharge - A potential risk during system level ESD testing
机译:
二次放电-系统级ESD测试期间的潜在风险
作者:
Wolf Heinrich
;
Gieser Horst
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
circuit testing;
electronics packaging;
electrostatic discharge;
failure analysis;
discharge current target levels;
failure threshold;
secondary discharge;
sensitive pins;
system level ESD testing;
Capacitance;
Current measurement;
Discharges (electric);
Electrostatic discharges;
Integrated circuits;
Metals;
Stress;
31.
Design and optimization of ESD lateral NPN device in 14nm FinFET SOI CMOS technology
机译:
14nm FinFET SOI CMOS技术中的ESD横向NPN器件的设计和优化
作者:
You Li
;
Mishra Rahul
;
Liyang Song
;
Gauthier Robert
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
CMOS integrated circuits;
MOSFET;
doping;
electrostatic discharge;
silicon-on-insulator;
ESD lateral NPN device optimization;
FinFET SOI CMOS technology;
Si;
base doping;
base length;
body resistance;
body-contact approach;
floating-body approach;
size 14 nm;
triggering performance;
Doping;
Electrostatic discharges;
Fingers;
Immune system;
Implants;
Junctions;
Performance evaluation;
32.
Design and optimization on ESD self-protection schemes for 700V LDMOS in high voltage power IC
机译:
高压功率IC中700V LDMOS的ESD自保护方案的设计和优化
作者:
Zhong Chen
;
Salman Akram
;
Mathur Guru
;
Boselli Gianluca
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
power MOSFET;
power integrated circuits;
semiconductor device breakdown;
semiconductor device models;
semiconductor device reliability;
ESD self-protection;
LDMOS;
breakdown failure mechanism;
high voltage power integrated circuit;
laterally diffused metal oxide semiconductor field effect transistor;
safe operating area;
thermal failure current;
voltage 700 V;
Electric potential;
Electrostatic discharges;
Immune system;
Logic gates;
Robustness;
Transient analysis;
33.
VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology
机译:
先进的批量FinFET技术中的ESD保护二极管的VFTLP特性
作者:
Shih-Hung Chen
;
Linten Dimitri
;
Scholz Mirko
;
Hellings Geert
;
Boschke Roman
;
Groeseneken Guido
;
Thean Aaron
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
MOSFET;
electrostatic discharge;
semiconductor diodes;
ESD protection diodes;
TCAD simulations;
VFTLP characteristics;
advanced bulk FinFET technology;
intrinsic ESD performance;
size 20 nm;
Electrostatic discharges;
FinFETs;
Implants;
Layout;
Logic gates;
Standards;
Stress;
34.
Benchmarking of factory level ESD control
机译:
工厂级ESD控制的基准测试
作者:
Viheriakoski Toni
;
Kohtamaki Jari
;
Peltoniemi Terttu
;
Tamminen Pasi
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
process control;
semiconductor industry;
factory level ESD control benchmark;
process control;
Electrostatic discharges;
Electrostatic measurements;
Organizations;
Process control;
Standards organizations;
Training;
35.
S-parameter based modeling of system-level ESD test bed
机译:
基于S参数的系统级ESD测试台建模
作者:
Yang Xiu
;
Thomson Nicholas
;
Mertens Robert
;
Rosenbaum Elyse
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
IEC standards;
S-parameters;
electrostatic discharge;
IEC 61000-4-2 test bed;
S-parameter measurements;
battery operated under-test;
circuit elements;
current waveforms;
system-level ESD test bed;
tethered equipment-under-test;
Computational modeling;
Current measurement;
Data models;
Discharges (electric);
Electrostatic discharges;
Integrated circuit modeling;
Scattering parameters;
36.
Uncertainties in charge measurements of ESD Risk assessment
机译:
ESD风险评估的电荷测量不确定度
作者:
Viheriakoski Toni
;
Kohtamaki Jari
;
Peltoniemi Terttu
;
Tamminen Pasi
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
charge measurement;
electrostatic discharge;
risk management;
ESD risk assessment;
ESD source parameters;
charge measurement uncertainty;
electronics manufacturing;
process control;
Charge measurement;
Current measurement;
Electrostatic discharges;
Electrostatics;
Pollution measurement;
Uncertainty;
37.
P2P and Rmap - new software tool for quick and easy verification of power nets
机译:
P2P和Rmap-用于快速轻松验证电网的新软件工具
作者:
Ershov Maxim
;
Cadjan Meruzhan
;
Feinberg Yuri
;
Jochum Thomas
;
Ruth Scott
;
Etherton Melanie
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
current density;
electric potential;
electrostatic discharge;
software tools;
ESD device resistance;
IR voltage drop analysis;
P2P software tool;
Rmap functionality;
Rmap software tool;
current density verification;
electrical simulation;
layout errors;
point-to-point resistance calculation;
power nets verification;
power-ground net verification;
quick debugging;
quick identification;
resistance color maps;
specified starting points;
Color;
Electrostatic discharges;
Fingers;
Layout;
Metals;
Resistance;
Visualization;
38.
Development of a perfectly balanced electrostatic eliminator utilizing an intermittent pulse AC voltage power supply
机译:
利用间歇脉冲交流电压电源开发完美平衡的静电消除器
作者:
Takahashi Katsuyuki
;
Goto Akira
;
Yamaguchi Shinichi
;
Saito Tomokatsu
;
Sakamoto Kensuke
;
Nagata Hidemi
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic devices;
pulsed power supplies;
intermittent pulse AC voltage power supply;
ion balance;
offset voltage;
perfectly balanced fan type electrostatic eliminator development;
short-term fluctuation range;
Electric potential;
Electrodes;
Electrostatics;
Fluctuations;
Power supplies;
Voltage control;
Voltage measurement;
39.
Soft fails due to LU stress of virtual power domains
机译:
由于虚拟电源域的LU压力,软件失败
作者:
Domanski Krzysztof
;
Gossner Harald
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
failure analysis;
integrated circuit testing;
peripheral interfaces;
JESD78 testing;
LU stress;
USB 2.0 pin;
current injection;
integrated circuit shut-down;
latchup stress;
modified latchup test setup;
power rail;
soft fails;
substrate current;
virtual power domains;
weak LDO;
Couplings;
Current measurement;
Electrostatic discharges;
Layout;
Rails;
Substrates;
Universal Serial Bus;
40.
TLP-based Human Metal Model stress generator and analysis method of ESD generators
机译:
基于TLP的人体金属模型应力产生器及ESD产生器的分析方法
作者:
Beges Remi
;
Caignet Fabrice
;
Besse Patrice
;
Laine Jean-Philippe
;
Salles Alain
;
Mauran Nicolas
;
Nolhier Nicolas
;
Bafleur Marise
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
failure analysis;
transmission lines;
ESD generators;
TLP-based human metal model;
active devices;
compliant waveform;
failure levels;
stress analysis;
stress generator;
transmission line pulsing;
Capacitors;
Delays;
Electrostatic discharges;
Generators;
Hidden Markov models;
Inductors;
Resistors;
41.
A low-impedance TLP measurement system for power semiconductor characterization up to 700V and 400A in the microsecond range
机译:
一种低阻抗TLP测量系统,可在微秒范围内表征700V和400A的功率半导体
作者:
Cretu Gabriel
;
Cenusa Marius
;
Pfost Martin
;
Buyuktas Kevni
;
Wahl Uwe
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
power semiconductor devices;
semiconductor device breakdown;
semiconductor device testing;
CoolMOS devices;
characteristic impedance;
current 400 A;
low-impedance TLP measurement system;
power semiconductor;
pulse length;
resistance 1.5 ohm;
safe operation area limits;
transmission line pulsing systems;
voltage 700 V;
Chlorine;
Integrated circuits;
Irrigation;
Switches;
42.
Source of miscorrelation of product level HBM to TLP test results
机译:
产品水平HBM与TLP测试结果不相关的原因
作者:
Prabhu Manjunatha
;
Jian-Hsing Lee
;
Natarajan Mahadeva Iyer
;
Kumar Vasantha
;
Jain Ruchil
;
Tsung-Che Tsai
;
Li Zhiqing
;
Thurmer Dominic
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
integrated circuit testing;
ESD current;
complex ESD circuit;
product level HBM test results;
product level TLP test results;
Current density;
Current distribution;
Discharges (electric);
Electrostatic discharges;
MOSFET;
Stress;
43.
Essential - integration of ESD verification methodologies
机译:
基本-ESD验证方法的集成
作者:
Trivedi N.
;
Alvarez D.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
integrated circuit design;
network topology;
system-on-chip;
ESD verification methodologies;
SoC;
clamp interconnect resistance;
interconnect checks;
Arrays;
Clamps;
Electrostatic discharges;
Engines;
Layout;
Resistance;
Topology;
44.
HBM failures induced by ESD cell turn-off and circuit interaction with ESD protection
机译:
ESD单元关闭以及电路与ESD保护相互作用导致的HBM故障
作者:
Yang Xiao
;
Concannon Ann
;
Sankaralingam Rajkumar
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electronics packaging;
electrostatic discharge;
failure analysis;
integrated circuit design;
ESD cell turn-off;
ESD protection;
HBM failures;
transient circuit interaction;
Computer architecture;
Electrostatic discharges;
Hardware design languages;
Microprocessors;
Resistors;
Stress;
Voltage measurement;
45.
Low impedance contact CDM
机译:
低阻抗接触式CDM
作者:
Jack Nathan
;
Maloney Timothy J.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electric charge;
electrical contacts;
failure analysis;
relays;
charge-device model;
effective system impedances;
failure currents;
legacy field-induced CDM;
low impedance contact CDM;
relay-based contact CDM;
waveforms currents;
Calibration;
Coaxial cables;
Discharges (electric);
Impedance;
Oscilloscopes;
Standards;
Stress;
46.
Investigation and solution to the early failure of parasitic NPN triggered by the adjacent PNP ESD clamps
机译:
相邻PNP ESD钳位引起的寄生NPN早期失效的调查和解决方案
作者:
Ming-Fu Tsai
;
Jen-Chou Tseng
;
Kuo-Ji Chen
;
Ming-Hsiang Song
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
semiconductor device breakdown;
semiconductor device reliability;
ESD damage;
ESD stress;
HBM immunity;
adjacent PNP ESD clamps;
early failure;
embedded SCR structure;
latchup-hard requirements;
parasitic NPN;
pin-to-pin protection;
Anodes;
Clamps;
Electrostatic discharges;
Junctions;
Structural rings;
Substrates;
Thyristors;
47.
Air-discharge testing of single components
机译:
单个零件的排气测试
作者:
Ritter Hans-Martin
;
Koch Lars
;
Schneider Mark
;
Notermans Guido
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
air discharge pulse;
air-discharge testing;
contact discharge;
single component;
Antennas;
Capacitance;
Current measurement;
Discharges (electric);
Electrostatic discharges;
Shape;
Sparks;
48.
Multi-physics simulations for triboelectric charging of display panels during the roller transfer process
机译:
滚筒转移过程中显示面板摩擦带电的多物理场模拟
作者:
Ki-Hyuk Kim
;
Pommerenke David
;
Yingjie Gan
;
Nam-Hee Goo
;
SeukWhan Lee
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
display instrumentation;
electric charge;
triboelectricity;
display panels;
electrical models;
mechanical models;
multiphysics simulations;
roller transfer process;
transient triboelectric charging;
triboelectric charges;
Analytical models;
Contacts;
Friction;
Glass;
Surface charging;
Three-dimensional displays;
49.
Active clamp design for on-chip GUN protection
机译:
有源钳位设计,用于片上GUN保护
作者:
Rupp Andreas
;
Glaser Ulrich
;
Yiqun Cao
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electronics packaging;
electrostatic discharge;
failure analysis;
integrated circuit design;
active clamp design;
component-level ESD protection;
on-chip GUN protection;
Capacitance;
Clamps;
Electrostatic discharges;
Logic gates;
Robustness;
System-on-chip;
Transient analysis;
50.
Active clamps with hybrid BJT-CMOS operation mode
机译:
具有混合BJT-CMOS工作模式的有源钳位
作者:
Vashchenko Vladislav
;
Aliaj Blerina
;
Tazzoli Augusto
;
Shibkov Andrei
会议名称:
《》
|
2015年
关键词:
CMOS integrated circuits;
bipolar transistors;
electrostatic discharge;
numerical analysis;
ESD component;
HMM regime;
NLDMOS device;
active protection clamps;
hybrid BJT-CMOS operation mode;
integrated LDMOS devices;
internal gain;
linear regime;
mixed bipolar-CMOS regime;
numerical simulation;
parasitic bipolar transistor;
surge operation regime;
Arrays;
Clamps;
Electrostatic discharges;
Hidden Markov models;
Logic gates;
Surge protection;
Surges;
51.
A study of the effect of remote CDM clamps in integrated circuits
机译:
远程CDM钳位在集成电路中的作用研究
作者:
Abessolo-Bidzo Dolphin
;
Smedes Theo
;
de Jong Peter C.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
integrated circuit design;
integrated circuit packaging;
integrated circuit testing;
ESD risk;
HBM;
cross-domain signals;
integrated circuits;
remote CDM clamps;
vf-TLP characterizations;
Clamps;
Electrostatic discharges;
Integrated circuit modeling;
Logic gates;
Receivers;
Substrates;
52.
Schematic-Level and Layout-Level ESD EDA check methodology applied to smart power IC's - initialization and implementation
机译:
适用于智能功率IC的原理图和布局级ESD EDA检查方法-初始化和实现
作者:
Gevinti Eleonora
;
Cerati Lorenzo
;
Di Biccari Leonardo
;
Ballarin Giuseppe
;
Andreini Antonio
;
Fragnoli Mauro
;
Bogani Antonio
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electronic design automation;
electrostatic discharge;
integrated circuit interconnections;
integrated circuit layout;
network topology;
power integrated circuits;
electronic design automation;
fully check IC ESD network topology;
functional methodology;
layout-level ESD EDA check methodology;
metal interconnections;
protected circuitry ESD compliance;
schematic-level ESD EDA check methodology;
smart power integrated circuit;
Clamps;
Electrostatic discharges;
Integrated circuit interconnections;
Network topology;
Robustness;
Voltage control;
53.
Using CC-TLP to get a CDM robustness value
机译:
使用CC-TLP获得CDM鲁棒性值
作者:
Esmark Kai
;
Gaertner Reinhold
;
Seidl Stefan
;
zur Nieden Friedrich
;
Wolf Heinrich
;
Gieser Horst
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
electrostatic discharge;
failure analysis;
wafer level packaging;
CC-TLP;
CDM failure signatures;
CDM robustness value;
ESD risk;
air discharge;
charged device model;
failure locations;
package level;
stress failing level;
wafer level;
Capacitance;
Correlation;
Discharges (electric);
Electrostatic discharges;
Integrated circuits;
Robustness;
Stress;
54.
An electrostatic-discharge-protection solution for Silicon-Carbide MESFET
机译:
碳化硅MESFET的静电放电保护解决方案
作者:
Phulpin T.
;
Tremouilles D.
;
Isoird K.
;
Tournier D.
;
Godignon P.
;
Austin P.
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
Schottky gate field effect transistors;
electrostatic discharge;
silicon compounds;
wide band gap semiconductors;
SiC;
electrostatic discharge protection;
low intrinsic ESD robustness;
planar SiC MESFET ESD robustness;
power electronics;
silicon-carbide MESFET;
wide band gap material;
Electrodes;
Electrostatic discharges;
MESFETs;
Metals;
Robustness;
Schottky diodes;
Silicon carbide;
55.
Manufacturing changes air ionization technology
机译:
制造业改变了空气电离技术
作者:
Steinman Arnold
会议名称:
《Electrical Overstress/Electrostatic Discharge Symposium》
|
2015年
关键词:
ionisation;
semiconductor device manufacture;
air ionization technology;
disk drive storage density;
display size;
geometries;
ionization method;
ionization requirements;
manufacturing;
operating speed;
semiconductor device functionality;
static control;
wafer size;
Automation;
Corona;
Electrostatic discharges;
Ionization;
Manufacturing;
Production;
Surface treatment;
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