1. A comparative study between phosphorus diffusion gettering (PDG) of iron (Fe) and chromium (Cr) impurities in silicon wafers is presented. 2. The study was carried out through numerical simulation software developed in our Centre CRTSE. 3. The simulated aspects include the diffusion and segregation of metallic impurities in silicon, and also the precipitates dissolution phenomenon. 4. The kinetic of dissolved metal gettering has been described by a diffusion - segregation equation (DSE) extended by a term which describes the precipitates dissolution. 5. The simulation allowed us to investigate the evolution of the interstitial impurities concentrations ([Fe_i] and [Cr_i]) in silicon wafers as a function of time and temperature of the process. 6. The obtained results demonstrate mainly the existence of a minimum value of impurity concentration after a specific gettering temperature.
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