A NEW IMPROVED CLOSED TUBE DIFFUSION PROCESS WITH IMPURITY GETTERING IN SILICON

摘要

A closed tube diffusion process for the manufacture of semiconductor devices with simultaneous impurity gettering during dopant diffusion in silicon which comprises filling of 10 volume percent of anhydrous hydrogen chloride in ultra pure argon gas into standard quartz ampoule containing silicon waters, dopant gallium source, quartz accessories and subjecting the above mentioned ampoule to the diffusion temperature in the range of 1200-1300 degrees Celsius for a period of 50-60 hours.