Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators

摘要

Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.