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Building-in reliability and challenges in analysis in sub#x2212;100nm devices - An overview

机译：亚100nm设备分析中的建立可靠性和挑战 - 概述

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摘要

This paper reviews some of the recent trends in the fail site identification and physical analysis towards building-in reliability (BIR) in sub-100 nm devices.

机译：本文评论了近期近期趋势的近期趋势，对亚100NM设备中的建立可靠性（BIR）进行了物理分析。

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《International Symposium on the Physical and Failure Analysis of Integrated Circuits 》|2009年||共3页
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中图分类 TN43-53;
关键词
failure analysis; nanoelectronics; reliability; reviews; building-in reliability; fail site identification; physical analysis; size 100 nm; sub100 nm devices;

机译：失败分析;纳米电子学;可靠性;评论;建立可靠性;失败网站识别;物理分析;大小100nm;Sub100 NM设备;

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Building-in reliability and challenges in analysis in sub#x2212;100nm devices - An overview

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