Electromigration prediction and test for 0.18#x03BC;m power technology in wafer level reliability

摘要

This paper investigates the electromigration prediction and test for a 0.18μm power technology in a wafer level reliability interconnect structure. The driving force for electromigration induced failure considered here includes the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient. Both the electromigration prediction and test for chemical-mechanical planarization (CMP) and non-CMP power devices are investigated. Parameters of different barrier metal thicknesses are studied. The simulation also gives the effect comparison with and without consideration of the atomic density gradient. The results showed that the predicted electromigration mean time to failure (MTTF) are well correlated with the experimental test data.