首页> 外文会议>IEEE Electronic Components and Technology Conference >Versatile Z-axis interconnection-based coreless technology solutions for next generation packaging
【24h】

Versatile Z-axis interconnection-based coreless technology solutions for next generation packaging

机译:基于多功能Z轴互连的无芯技术解决方案,适用于下一代封装

获取原文

摘要

This paper discusses a novel strategy to combine Z-interconnect and coreless technology together to fabricate high density substrates for next generation packaging. The process starts with coreless fabrication of building blocks including signal and joining subcomposites (subs), and subsequently join and interconnect them by a lamination process. Through holes in the joining subs are filled with a conductive adhesive formulated using controlled-sized metallic particles to produce electrical connection between signal subs during lamination. A variety of filled joining and signal subs are fabricated to form a various combination of multilayer high density structures including rigid, rigid-rigid, rigid-flex, stacked packages, or RF substrates. Coreless z-axis interconnect flip-chip packages were evaluated at both the subcomposite and composite levels to understand and reduce paste-to-package CTE mismatch. As a case study, a coreless z-axis interconnect construction for a 150 μm pitch flip-chip package having mixed dielectric was used to evaluate CTE and warpage. The flip-chip package shows room temperature warpage averaged 56 microns, reducing to 45 microns near reflow temperature. S-parameter measurement was used to gauge electrical performance, and the coreless Z-interconnect package showed very low loss at multi-gigahertz frequencies. The current process can be used to fabricate a wide range of substrates with electrically conducting adhesive-based joints having diameters in the range of 55 to 500 μm.
机译:本文讨论了一种将Z-interconnect和无芯技术结合在一起以制造用于下一代封装的高密度基板的新颖策略。该过程开始于无芯制造包括信号和连接子复合物(subs)的构件,然后通过层压过程将其连接和互连。在连接接头的通孔中填充了导电胶,该导电胶使用尺寸受控的金属粒子配制而成,可在层压期间在信号接头之间产生电连接。制造各种填充的连接和信号接头,以形成多层高密度结构的各种组合,包括刚性,刚性-刚性,刚性-挠性,堆叠式封装或RF基板。在亚复合材料和复合材料两个级别都对无芯z轴互连倒装芯片封装进行了评估,以了解和减少膏对封装CTE的不匹配。作为案例研究,使用具有混合电介质的150μm节距倒装芯片封装的无芯z轴互连结构来评估CTE和翘曲。倒装芯片封装的室温翘曲平均为56微米,在回流温度附近降至45微米。 S参数测量用于衡量电气性能,无芯Z互连封装在数GHz的频率下显示出非常低的损耗。当前的工艺可以用于制造具有导电粘合剂基接缝的各种基材,这些接缝的直径在55至500μm的范围内。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号