Ultra-Thin-Body P-MOSFET Featuring Silicon-Germanium Source/Drain Stressors With High Germanium Content Formed by Local Condensation

摘要

We report the demonstration of a strained Ultra-Thin-Body (UTB) p-channel field-effect transistor (pFET) with a silicon body thickness of 8 nm and silicon-germanium (SiGe) source and drain (S/D) stressors with 46% germanium (Ge). The Ge incorporation into the S/D regions is the highest reported to date, and is realized using a novel Ge condensation process in the S/D regions, performed for the first time on UTB transistors. Structurally, the SiGe S/D regions flank the Si channel on both the source and drain edges, and contribute to a large lateral compressive channel strain. Significant I{sub}(Dsat) enhancement is observed at a physical gate length L{sub}G of 70 nm. Excellent DIBL and subthreshold swing characteristics were achieved.