METHOD FOR FORMING FIELD EFFECT TRANSISTORS HAVING SILICON-GERMANIUM SOURCE/DRAIN REGIONS CAPABLE OF INCREASING THE MOBILITY OF CHARGE CARRIERS

摘要

PURPOSE: A method for forming field effect transistors having silicon-germanium source/drain regions is provided to improve the performance and throughput of transistors by preventing the corrosion of channels due to silicide.;CONSTITUTION: A silicon-germanium channel layer is formed on a semiconductor active area(102). An insulating gate electrode including a nitride film cap is formed on the semiconductor active area(104). A source/drain region trench is selectively etched by using a gate electrode as an etch mask(106). An SiGe source/drain extension region is epitaxially grown in the source/drain region trench(108). A part of the SiGe source/drain extension region is etched back(110). A silicon capping layer is epitaxially grown on the SiGe source/drain extension region(112). A silicide contact area is formed on the silicon capping layer(114).;COPYRIGHT KIPO 2013;[Reference numerals] (100) Method for forming field effect transistors; (102) Form a SiGe channel layer on a semiconductor active area; (104) Form an insulating gate electrode including a nitride film cap on the semiconductor active area; (106) Selectively etch source/drain region trench into the semiconductor active area using the gate electrode as an etching mask; (108) Epitaxially grow a SiGe source/drain extension region in the source/drain region trench; (110) Etch back a part of the SiGe source/drain extension region; (112) Epitaxially grow a silicon capping layer on the SiGe source/drain extension region; (114) Form a silicide contact area on the silicon capping layer; (AA) End