Concept of Strain-Transfer-Layer and Integration with Graded Silicon-Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement

摘要

We report a novel strained Si_(0.75)Ge_(0.25) channel p-type field effect transistor (p-FET) that employs a silicon strain-transfer-layer (STL) buried beneath the channel. At the vertical heterojunction, the compliant silicon strain-transfer-layer, improv