Using three methods, i.e., modified photo-induced open-circuit voltage decay method (OCVD), small parallel resistance method and pulse recovery method, the minority carrier lifetime in the base region of Hg{sub}(1-x)Cd{sub}xTe pn junction devices has been measured at liquid nitrogen temperature. The lifetime is in the range of 18～407ns for x=0.231～0.4186, 1～100ns for x=0.2234～0.305, and 4～20ns for x=0.231～0.4186 for the modified photo-induced OCVD method, the small parallel resistance method and the pulse recovery method, respectively. The results indicate that the lifetime become longer with the increase of Cd composition.
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