首页> 外文会议>European Solid‐State Circuits Conference >Time interleaved C-2C SAR ADC with background timing skew calibration in 65nm CMOS
【24h】

Time interleaved C-2C SAR ADC with background timing skew calibration in 65nm CMOS

机译:时间交错的C-2C SAR ADC与65nm CMOS中的背景定时偏斜校准

获取原文

摘要

This paper presents a 5GS/s 8-bit 40-way time-interleaved SAR ADC fabricated in 65nm CMOS. Two-level hierarchical interleaving is employed, resulting in 4 sub-ADCs each operating at 1.25GS/s at the topmost level with front-end track and hold samplers. The sub-ADCs use capacitive C-2C DACs to minimize the input capacitance and area. A novel background timing skew calibration method is used which requires no redundant signal paths. After calibration, the ADC achieves an SNDR of 33.3dB at Nyquist and consumes 138.6mW from a 1V supply with a 5GS/s sampling rate, yielding an FOM of 738fJ/conv-step. The individual sub-ADC achieves an SNDR of 37.9dB at Nyquist and consumes 34.2mW, yielding an FOM of 428fJ/conv-step.
机译:本文介绍了5Gs / s的8位40路时间交错的SAR ADC,由65nm CMOS制成。 采用两级分层交织,导致4个子ADC,每个ADC在最顶端轨道上的最顶层操作时在1.25g / s处运行,并保持采样器。 子ADC使用电容式C-2C DAC,以最小化输入电容和区域。 使用一种新颖的背景时序歪斜校准方法,其不需要冗余信号路径。 校准后,ADC在奈奎斯特达到33.3dB的SND,并从1V电源下消耗138.6mW,采样率为5GS / S采样率,产生738FJ / CONV步骤的FOM。 各个子ADC在奈奎斯特达到37.9dB的SNDR,消耗34.2mW,产生428FJ / CONV步骤的FOM。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号