ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

摘要

Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3and HfO2were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.