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机译:MIS结构的ALD生长介电氧化物的性质和表征
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland,Natural Sciences College of Science, Cardinal S. Wyszyiiski University, Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland,Institute of Theoretical Physics, University of Warsaw, Warszawa, Poland;
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;
chemical vapor deposition (including plasma-enhanced cvd; mocvd; etc.); 77.55.-g; elements; oxides; nitrides; borides; carbides; chalcogenides; etc.; ⅲ-ⅴ semiconductors;
机译:铝掺杂氧化锡相对于纳米结构调制的热电性能研究
机译:高κCeZrO_4三元氧化物作为栅介质的金属氧化物半导体结构的电学特性和介电性能。
机译:使用ALD生长的ZnO缓冲层对化学溶液沉积生长的氧化铟锡性能的影响
机译:ALD生长的Al2O3栅极电介质的AlGaN / GaN MOS-HEMT中的阈值电压不稳定性:与氧化物/半导体界面态密度分布的关系
机译:ALD二氧化锆栅极电介质的材料和电性能。
机译:通过热ALD技术生长具有AlN栅极电介质的AlGaN / GaN MISHEMT
机译:H型金刚石MOS界面性能和FET特性,具有高温铝合金HFO2电介质
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。