Boosting the electrical performance of MOSFET switches by applying Ellipsoidal layout style

摘要

Through three-dimensional numerical simulations, we investigate the use of ellipsoidal layout style on the electrical performance of a Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) switch. This gate geometry is capable to adding two new effects in the MOSFET structure named Longitudinal Corner Effect (LCE) and Parallel Connection of MOSFET with Different Channel Lengths Effect (PAMDLE) that result in the boosting of the main digital figures of merit. The main findings of this work demonstrate that the Ellipsoidal gate geometry is a viable alternative layout style to implement MOSFET switches to significantly improve its electrical performance and, consequently, the performance of the DC/DC converters.