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VERTICALLY ALIGNED CARBON NANOTUBES FOR FIELD EMISSION CATHODES

机译:用于场发射阴极的垂直对准碳纳米管

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Arrays of isolated vertically aligned carbon nanotubes, va-CNTs, grown directly on metallic surfaces are potentially promising material for FE applications due to the modest FE turn-on voltages which result from a high geometric field enhancement factor. The growth of isolated vertically aligned carbon nanotubes, va-CNTs with defined diameter and location has been achieved with plasma enhanced chemical vapor deposition technique (PE-CVD) [1,2,3,4,5,6], so the fabrication of FE devices based on deterministic growth of isolated va-CNTs is now possible, which is attractive for some potential applications such as microgun [7], microCRT [8], or lighting elements [9]. In this study, we will address the following question: between arrays of individual va-CNTs and arrays of isolated tufts of va-CNTS what is the most advantageous spatial configuration for FE stability and lifetime in a poor vacuum working environment (~10{sup}(-7) Torr), which is specific for industrial applications.
机译:直接在金属表面上直接生长的隔离垂直对准的碳纳米管VA-CNT阵列是由于高几何场增强因子产生的适用性的FE型电压导致FE应用的潜在希望的材料。分离的垂直取向碳纳米管的生长,具有限定直径和位置的VA-CNT,具有等离子体增强化学气相沉积技术(PE-CVD)[1,2,3,4,5,6],因此制造现在可以基于隔离VA-CNT的确定性生长的FE装置,这对于一些潜在的应用是微池[7],微贸杆[8]或照明元件[9]的一些潜在应用是有吸引力的。在这项研究中,我们将解决以下问题:VA-CNT的单个VA-CNT和隔离簇数阵列之间的FE稳定性和寿命中的最有利的空间配置在较差的真空工作环境(〜10 {SUP }( - 7)Torr),其特定于工业应用。

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