InGaAs bulk crystal growth for high T/sub 0/ semiconductor lasers

摘要

The In/sub x/Ga/sub 1-x/As (x=0.25/spl sim/0.30) bulk crystal is necessary for the high characteristic temperature (T/sub 0/) lasers emitting in 1.3 /spl mu/m. We have developed the multi-component zone growth method using an InGaAs Bridgman crystal as the seed. In this paper, we show that InGaAs single seed crystals can be grown by the Bridgman method and that In/sub 0.28/Ga/sub 0.72/As crystals with uniform composition in the growth direction can be grown. We think that our bulk crystal growth method should be effective for other ternary compound semiconductors.