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Crystallisation-enhanced bulk hole mobility in phenothiazine-based organic semiconductors

机译:吩噻嗪类有机半导体中的结晶增强体孔迁移率

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摘要

A series of three novel donor-acceptor systems based on C(3)-malononitrile-substituted phenothiazines was synthesised in good overall yields and their thermal, spectroscopic, and electrochemical properties were characterised. The compounds were prepared through a sequence of Ullmann-coupling, Vilsmeier-Haack formylation and Knoevenagel-condensation, followed by Suzuki-coupling reactions for introduction of aryl substitutents at C(7) position of the phenothiazine. The introduction of a donor unit at the C(7) position exhibited a weak impact on the optical and electrochemical characteristics of the compounds and led to amorphous films with bulk hole mobilities in the typical range reported for phenothiazines, despite the higher charge delocalisation as attested by computational studies. In contrast, highly ordered films were formed when using the C(7)-unsubstituted 3-malononitrile phenothiazine, exhibiting an outstanding mobility of 1 × 10−3 cm2 V−1 s−1, the highest reported for this class of compounds. Computational conformational analysis of the new phenothizanes suggested that free rotation of the substitutents at the C(7) position suppresses the ordering of the system, thereby hampering suitable packing of the new materials needed for high charge carrier mobility.
机译:一系列三个新颖的基于C(3)-丙二腈取代的吩噻嗪的新型供体-受体体系以良好的总收率合成,并对其热,光谱和电化学性质进行了表征。这些化合物是通过一系列Ullmann偶联,Vilsmeier-Haack甲酰化和Knoevenagel缩合制备的,然后通过Suzuki偶联反应在吩噻嗪的C(7)位置引入芳基取代基。在C(7)位置引入供体单元对化合物的光学和电化学特性表现出较弱的影响,并导致非晶态膜的体孔迁移率在吩噻嗪的典型范围内,尽管已证明有较高的电荷离域通过计算研究。相反,当使用C(7)-未取代的3-丙二腈吩噻嗪时,形成了高度有序的膜,表现出出色的迁移率1×10 -3 cm 2 V < sup> -1 s -1 ,此类化合物的最高报道。新的吩噻嗪类的计算构象分析表明,取代基在C(7)位置的自由旋转抑制了系统的有序排列,从而阻碍了高电荷载流子迁移所需的新材料的适当包装。

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