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Modelling pattern dependent variations in semi-additive copper electrochemical plating: AP/DFM: Advanced patterning / design for manufacturability

机译:半加铜电化学电镀的建模模式依赖性变化:AP / DFM:可制造性的先进图案化/设计

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An empirical model is proposed for predicting layout-dependent thickness variations in the semi-additive copper electrochemical plating (ECP) process. These variations are believed to be caused by the uneven depletion of copper sulfate (CuSO4) during plating, causing low pattern density areas to plate faster than higher pattern density areas. Effective pattern density is extracted from the layout using a spatial filter, and then mapped to the growth rates using a non-linear function. Test structures are designed that represent a wide range of feature sizes and densities. After plating, these structures are profiled and used to fit the model, while similar structures are used to validate its accuracy. Comparisons between the validation predictions and the experimental results show an average Balanced Root Mean Squared Error (BRMSE) of 0.292 μm, and a corresponding R2value of 0.90.
机译:提出了一种经验模型,用于预测半添加剂铜电化学电化学(ECP)过程中的布局依赖性厚度变化。据信这些变化是由硫酸铜的不均匀耗尽引起的(Cuso 4 )在电镀期间,使得低图案密度区域比更高的图案密度区域更快地板。使用空间滤波器从布局中提取有效的图案密度,然后使用非线性函数映射到生长速率。测试结构设计,表示各种特征尺寸和密度。电镀后,这些结构是分布并用于适合模型,而类似的结构用于验证其精度。验证预测与实验结果之间的比较显示了0.292μm的平均平衡根平均平方误差(BRMSE),以及相应的R 2 价值0.90。

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