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Modelling pattern dependent variations in semi-additive copper electrochemical plating: AP/DFM: Advanced patterning / design for manufacturability

机译:在半添加铜电化学电镀中建模与图案相关的变化:AP / DFM:先进的图案/可制造性设计

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An empirical model is proposed for predicting layout-dependent thickness variations in the semi-additive copper electrochemical plating (ECP) process. These variations are believed to be caused by the uneven depletion of copper sulfate (CuSO4) during plating, causing low pattern density areas to plate faster than higher pattern density areas. Effective pattern density is extracted from the layout using a spatial filter, and then mapped to the growth rates using a non-linear function. Test structures are designed that represent a wide range of feature sizes and densities. After plating, these structures are profiled and used to fit the model, while similar structures are used to validate its accuracy. Comparisons between the validation predictions and the experimental results show an average Balanced Root Mean Squared Error (BRMSE) of 0.292 μm, and a corresponding R2value of 0.90.
机译:提出了一种经验模型,用于预测半添加式铜电化学电镀(ECP)工艺中与布局有关的厚度变化。这些变化被认为是由于硫酸铜(CuSO 4 )在电镀过程中,导致低图案密度区域的电镀速度快于高图案密度区域。使用空间滤波器从布局中提取有效图案密度,然后使用非线性函数将其映射到增长率。设计的测试结构可以代表各种特征尺寸和密度。电镀后,对这些结构进行轮廓分析并用于拟合模型,而相似的结构用于验证其准确性。验证预测与实验结果之间的比较表明,平均平衡均方根误差(BRMSE)为0.292μm,相应的R 2 值为0.90。

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