Low-Frequency Noise of Strained and Non-Strained n-Channel Tri-Gate FinFETs WithDifferent Gate Dielectrics

摘要

The influence of different front gate Hf-based high-k dielectrics (HfSiON/SiO_2andHfO_2/SiO_2) on the shape of low-frequency noise spectra for n-channel tri-gate FinFETsprocessed in standard silicon-on-insulator (SOI) substrates, and global Strained Si Directly OnInsulator (sSOI) wafers with/without Selective Epitaxial Grown (SEG) source and drain regionsis studied. For different process splits the concentration distributions of slow traps over thethickness of the gate dielectric are estimated and it is shown that these distributions depend onthe dielectric type.