Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

摘要

The results of low-frequency noise investigation in fully-depleted (FD)udnFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)udand strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typicaludat zero back gate voltage for the devices studied and the density of the correspondingudnoisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in theudHfO2 portion. The results on the McWhorter noise are used for studying the behavior ofudthe electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V whereudV*ud is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)udLorentzians appear in the low-frequency noise spectra at an accumulation back gateudvoltage and that the parameters of those Lorentzians are different for the sSOI and SOIudnFinFETs. This is the first observation of the LKE noise under a back-gate accumulationudbias for sufficiently wide nMuGFET.