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Effect of surface morphology and crystal orientations on fracture strength of thin film (110) single crystal silicon

机译:表面形态和晶体取向对薄膜(110)单晶硅断裂强度的影响

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We report the effects of surface damage and crystal orientations on fracture strength of single crystal silicon. Tensile tests of nine types of specimens from (110) SOI wafer, i.e. specimens of three crystal orientations with three different surface morphologies prepared by the specimen patterning process, showed that surface morphology improvement doubled average tensile strength: e.g. 〈110〉 strength varied from 1.8 GPa to 3.6 GPa, while average tensile strength difference among crystal orientations was less than 20 % on each fabrication conditions. Using SEM observation, we found tensile fracture characteristics of three crystal orientations: in 〈100〉 specimens the fracture origin location changed by the fabrication conditions, while 〈110〉 and 〈111〉 specimens respectively showed quantitative relationships between surface morphology and tensile strength common to different fabrication conditions.
机译:我们报告了表面损伤和晶体取向对单晶硅断裂强度的影响。对来自(110)SOI晶片的九种样品进行拉伸测试,即通过样品构图工艺制备的具有三种不同表面形貌的三个晶体取向的样品,表明表面形貌的改善使平均抗拉强度提高了一倍: 〈110〉强度在1.8GPa至3.6GPa之间变化,而在每种制造条件下,晶体取向之间的平均抗拉强度差小于20%。通过SEM观察,我们发现了三种晶向的拉伸断裂特性:在<100>试样中,断裂起点的位置因制造条件而改变,而<110>和<111>试样分别显示了表面形态与拉伸强度之间常见的定量关系。不同的制造条件。

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