Schottky diodes; power semiconductor diodes; power semiconductor switches; pulsed power switches; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; Silvaco ATLAS; breakdown electric field distribution; diode structure; electro-thermal transient simulation; forward current conduction path; high blocking electric field; high blocking voltage silicon carbide rectifiers; junction barrier Schottky diode; localized lattice heating; pulsed power applications; switching performance; voltage 3.3 kV; Anodes; Current density; Electric fields; Lattices; Schottky diodes; Silicon carbide;
机译:基于4H-SiC基于半导体器件的瞬态过程模拟(考虑到Silvaco TCAD软件包的掺杂剂不完全电离)
机译:高电流密度脉冲操作下基于电热模拟的4H-SiC p-i-n,肖特基和JBS二极管比较
机译:4500V 4H-SiC JBS二极管的仿真,制备和表征
机译:Silvaco Atlas的4H-SiC JBS二极管的物理基于电热瞬态模拟
机译:光和温度对销和SDD二极管特性的影响及其使用Atlas / Silvaco的比较
机译:基于双4H-SiC JBS和SBD器件的高性能温度传感器
机译:通过基于物理的混合模式电热仿真评估SiC大功率二极管的浪涌电流能力