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机译:4500V 4H-SiC JBS二极管的仿真,制备和表征
Nanjing Electronic Devices Institute Nanjing, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing, China;
Nanjing Electronic Devices Institute Nanjing, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing, China;
Nanjing Electronic Devices Institute Nanjing, China;
4H-SiC; JBS diodes; Edge termination; floating guard rings;
机译:6500V 4H-SiC JBS二极管的非均匀间距多浮面圆环的设计和制造
机译:高电流密度脉冲操作下基于电热模拟的4H-SiC p-i-n,肖特基和JBS二极管比较
机译:低前向降,低泄漏,1kV 4H-SiC JBS整流器的设计,制造和表征
机译:4500V 4H-SIC JBS二极管的仿真,制造和表征
机译:高压(> 10 kV)4H-SiC MPS二极管的设计,制造和表征
机译:含氧ALN / 4H-SIC异质结二极管的制备和表征
机译:含氧ALN / 4H-SIC异质结二极管的制备和表征