A study of 3D boss structure formation in anisotropic etching of Si (100) in aqueous KOH

摘要

The results of experimental investigation of formation features of the 3D boss with embedded V-groove for the optic fber, comprised in optomechanical part of MOEMS photovoltaic pressure sensor are presented. Dependences of ratio change of length of edges <110> and <410> forming underetching compensators of convex corners of the chip have been obtained. To provide good quality of the boss etch, the value of misalignment angle between the mask and silicon wafer primary fat has been defned to be less than 0.5 degrees.