Metal Gate Work Function Modulation by Ion Implantation for Multiple Threshold Voltage FinFET Devices

摘要

FinFET has emerged as a device structure to enable the device scaling at and beyond the 22nm technology node due to increasingly stringent demands for maximum device speed, lower leakage current and control of random dopant fluctuation effects. High-k dielectric (Hik)/metal gate (MG) technology makes it feasible to obtain improved Effective Oxide Thickness (EOT) scaling and reduced leakage. Replacement metal gate (RMG) flows have been used for high performance logic volume production at and beyond 45nm node. Precise threshold voltage (Vt) control and multiple Vt are required for FinFET device architectures for future devices.