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Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices
Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices
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机译:金属栅极功函数工程设计技术,以实现多个阈值电压FINFET器件
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摘要
Techniques are provided for gate work function engineering in FIN FET devices using a work function setting material an amount of which is provided proportional to fin pitch. In one aspect, a FIN FET device is provided. The FIN FET device includes a SOI wafer having an oxide layer and a SOI layer over a BOX, and a plurality of fins patterned in the oxide layer and the SOI layer; an interfacial oxide on the fins; and at least one gate stack on the interfacial oxide, the gate stack having (i) a conformal gate dielectric layer present, (ii) a conformal gate metal layer, and (iii) a conformal work function setting material layer. A volume of the conformal gate metal layer and a volume of the conformal work function setting material layer present in the gate stack is proportional to a pitch of the fins.
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机译:提供了使用功函数设定材料在FIN FET器件中进行栅极功函数工程设计的技术,该材料的数量与鳍间距成比例。一方面,提供了一种FIN FET器件。 FIN FET器件包括:具有在BOX上方的氧化物层和SOI层的SOI晶片;以及在氧化物层和SOI层中构图的多个鳍;鳍片上的界面氧化物;以及在界面氧化物上的至少一个栅极叠层,该栅极叠层具有(i)存在的保形栅极介电层,(ii)保形栅极金属层和(iii)保形功函数设定材料层。存在于栅极堆叠中的保形栅极金属层的体积和保形功函数设定材料层的体积与鳍片的间距成比例。
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