COO Reduction on Polysilicon Gate Doping by Beam Current Increase on Batch-Type Implanters

摘要

The D-Source, which ensures beam current increase in the LEX series, SEN's High Current batch-type implanter, has been developed for productivity improvement or COO reduction. The D-Source can achieve beam current increase dramatically only by replacing the original source. Moreover, the D-Source has longer source life time with easier maintenance. Performance of the D-Source will be reported in this paper.