Reproducible and High-Resolution Analysis on Ultra-Shallow-JunctionCMOSFETs by Scanning Spreading Resistance Microscopy

摘要

Two-dimensional characterization of ultra-shallow junction CMOSFETs is performed by scanning spreading resistance microscopy (SSRM). Reproducible SSRM images with high spatial resolution are obtained by measuring in vacuum, and the wearing out characteristics of probes are also improved. Halo distribution of ultra-shallow junctions has very limited lateral diffusion and shows variation with decreasing gate length under ~60 nm. Source/drain extension (SDE) depth of ~10 nm is measured reproducibly on different gate length pMOSFETs.