Analysis of Self Heating Effect in Vertical-channel Field Effect Transistor

摘要

In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.