Design and applications of magnetic tunnel junction based logic circuits

摘要

By offering zero standby power, non-volatile logic is a promising solution to overcome the leakage current issue which has become an important obstacle, when CMOS technology is shrunk. Magnetic tunnel junction (MTJ)-based logic has a great potential, because of unlimited endurance, CMOS compatibility, and fast switching speed. Recently, several non-volatile MTJ-based circuits have been presented which inherently realize logic-in-memory circuit concepts by using MTJ devices as both memory and the main computing elements. In this work we present a reliability simulation method for designing MTJ-based logic gates integrated with CMOS. As an application example, we study the reliability of a magnetic full adder in two different designs based on the implication and the reprogrammable MTJ logic gates.