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Photon Emission Microscope as a Tool for 3-Dimensional Semiconductor Device Failure Analysis

机译:光子发射显微镜作为三维半导体器件故障分析的工具

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A three dimensional (3-D) photon emission failure analysis method has been developed to pinpoint failure sites or emission sites on the x, y, and z planes of a degraded diode. The 3-D analysis consists of a cross-sectioning step process on two adjacent sides of a diode utilizing two photon emission sites from respective sides of the die as a map. This process negates the uncertainty and long processing times during cross-sectional analysis to find minute defects in diodes.
机译:已经开发了三维(3-D)光子发射失效分析方法,以查明退化二极管的x,y和z平面上的失效部位或发射部位。 3-D分析包括在二极管的两个相邻侧面上进行横截面步骤的过程,该过程使用来自管芯各个侧面的两个光子发射位点作为图。该过程消除了在横截面分析中发现二极管中微小缺陷的不确定性和较长的处理时间。

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