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FAILURE ANALYSIS METHOD USING EMISSION MICROSCOPE AND SYSTEM THEREOF AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

机译:半导体器件的发射显微镜失效分析方法及其系统和生产方法

摘要

A failure analysis method and system thereof, capable of performing a failure analysis on a semiconductor device, in which LSI chips such as system LSIs are arranged, in conjunction with circuit blocks within an LSI chip and based on a luminous image detected by an emission microscope. The method is characterized by comprising: an emission calculating step wherein an arranging condition of luminous points on an LSI chips-arranged semiconductor device is checked based on a luminous image detected by an emission microscope, luminous points are classified into a plurality of luminous types based on the checked arranging condition of luminous points, and the occurrence frequencies of respective classified luminous types are calculated for each LSI chip and for each of circuit blocks of different types in each LSI chip; and an analysis step for performing failure analysis based on the occurrence frequencies for each LSI chip and for each circuit block as calculated in the emission calculating step.
机译:一种故障分析方法及其系统,能够基于由发射显微镜检测到的发光图像,对其中布置有诸如系统LSI之类的LSI芯片的半导体器件,与LSI芯片内的电路块结合,进行故障分析。 。该方法的特征在于包括:发射计算步骤,其中,基于由发射显微镜检测到的发光图像来检查布置有LSI芯片的半导体器件上的发光点的布置条件,基于这些发光点将发光点分类为多种发光类型。根据检查后的发光点排列条件,针对每个LSI芯片以及每个LSI芯片中不同类型的每个电路块,计算出各个分类发光类型的出现频率;分析步骤用于基于在发射计算步骤中计算出的每个LSI芯片和每个电路块的出现频率来进行故障分析。

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