首页> 外国专利> METHOD OF ANALYZING FAILURE OF SEMICONDUCTOR DEVICE BY USING EMISSION ELECTRON MICROSCOPE AND SYSTEM FOR ANALYZING FAILURE OF SEMICONDUCTOR DEVICE

METHOD OF ANALYZING FAILURE OF SEMICONDUCTOR DEVICE BY USING EMISSION ELECTRON MICROSCOPE AND SYSTEM FOR ANALYZING FAILURE OF SEMICONDUCTOR DEVICE

机译:利用发射电子显微镜分析半导体器件故障的方法和分析半导体器件故障的系统

摘要

[Problem] The failure analysis method of the semiconductor device by an emission microscope which can analyze current leak easily is calculated | required.;[Measures] Light emission information is stored on the X / Y memory space 16 in the Z direction as the light emission intensity.;The light emitting bits 17 in the light emission information mean bits determined to emit light, and the number of bits is determined based on the light emission intensity.;That is, the image memory 11 has a three-dimensional memory space in which the plane position of the light emission point is the X / Y space and the emission intensity is the Z space.;Then, by searching for the light emission information stored in the image memory 11, the position and intensity of light emission are detected to analyze the failure.
机译:[问题]计算出能够容易地分析电流泄漏的利用发射显微镜的半导体装置的故障分析方法| [措施]在Z方向上将发光信息存储在X / Y存储空间16中作为发光强度。发光信息中的发光位17是指确定发光的位,并且该数量根据发光强度确定比特数。即,图像存储器11具有三维存储空间,其中发光点的平面位置是X / Y空间,发光强度是Z空间。然后,通过搜索存储在图像存储器11中的发光信息,检测发光的位置和强度以分析故障。

著录项

  • 公开/公告号KR100249630B1

    专利类型

  • 公开/公告日2000-03-15

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;

    申请/专利号KR19960061537

  • 发明设计人 고야마 토루;

    申请日1996-12-04

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 01:44:54

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