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METHOD OF ANALYZING FAILURE OF SEMICONDUCTOR DEVICE BY USING EMISSION ELECTRON MICROSCOPE AND SYSTEM FOR ANALYZING FAILURE OF SEMICONDUCTOR DEVICE
METHOD OF ANALYZING FAILURE OF SEMICONDUCTOR DEVICE BY USING EMISSION ELECTRON MICROSCOPE AND SYSTEM FOR ANALYZING FAILURE OF SEMICONDUCTOR DEVICE
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机译:利用发射电子显微镜分析半导体器件故障的方法和分析半导体器件故障的系统
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摘要
[Problem] The failure analysis method of the semiconductor device by an emission microscope which can analyze current leak easily is calculated | required.;[Measures] Light emission information is stored on the X / Y memory space 16 in the Z direction as the light emission intensity.;The light emitting bits 17 in the light emission information mean bits determined to emit light, and the number of bits is determined based on the light emission intensity.;That is, the image memory 11 has a three-dimensional memory space in which the plane position of the light emission point is the X / Y space and the emission intensity is the Z space.;Then, by searching for the light emission information stored in the image memory 11, the position and intensity of light emission are detected to analyze the failure.
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