Metallization Failures in Semiconductor Devices

摘要

By monitoring the resistance of thin film structures, information concerning the activation energy and reaction kinetics of solid state reaction occurring in metal systems was obtained in relatively short times. By permitting sensitive measurements to be made at relatively low stress conditions, the potential hazard of extrapolating high stress data is avoided. Metal-metal, metal-semiconductor, and metal-oxide systems were studied at temperatures ranging from 150C up to 20C below the solidus temperature of some of the systems. Data were obtained on interactions in various ohmic contact systems, including Au-(Sn-Sb), Ag-Sn, Au-Cr, Au-(Ni-Cr), Al-Si and Al-SiO2. (Author)