1.3 #x00B5;m InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces

摘要

A 1.3 µm room-temperature InAs/GaAs quantum dot laser on a Si rib structure is demonstrated. The laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation, realizing current injection through the Si rib.