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Rapid Fabrication of Cu(In,Ga)Se_2 Thin Films from Se-containing Precursors by the Two-step Selenization Process

机译:通过两步硒化过程从含Se的前体的Cu(In,Ga)Se_2薄膜的快速制造

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We are investigating the two-step selenization process for fabricating Cu(In,Ga)Se_2 thin films with the objectives of a rapid selenization step and a homogeneous film without the addition of sulfur. Here, we focus on Se-containing precursors to gain an understanding of the reaction pathway in order to speed up the selenization process. Elemental depth profiles show that including an optimal amount of Se in the precursor resulted in a more uniform composition throughout the film thickness. Solar cell devices were made from each film. Our goal is to fabricate high-efficiency solar cells by a rapid, two step selenization that will be transferrable to a simple industrial process.
机译:我们正在研究与快速硒化步骤和均匀膜的薄膜制造Cu(In,Ga)Se_2薄膜的两步硒化方法,而不加入硫。在这里,我们专注于含SE的前体,以了解反应途径以加速硒化过程。元素深度分布显示,在整个前体中的最佳Se的最佳量在整个膜厚度中产生更均匀的组成。太阳能电池装置由每种薄膜制成。我们的目标是通过快速的两步硒化制造高效的太阳能电池,该校准将转移到简单的工业过程。

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