THE EFFECT OF DEPOSITION PRESSURE ON THE SURFACE ROUGHNESS SCALING OF MICROCRYSTALLINE SILICON FILMS BY VERY HIGH FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

摘要

The scaling behaviour of surface roughness evolution of μc-Si:H prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) has been investigated using spectroscopic ellipsometry (SE). The growth exponent βwas compared for the film deposited under the different pressure P_g. For films deposited at P_g = 70 Pa, the growth exponent β is about.0.22, which corresponds to the definite diffusion growth. However, films deposited at P_g = 300 Pa show abnormal scaling behavior with the exponent β of about.0.81, which is much larger than 0.5 of zero diffusion limit in the scaling theory. This implies that some roughening increasing mechanism such as shadowing effect contributes to the growing surface.