A Comparative Numerical Simulation of a Nanoscaled Body on Insulator FinFET

摘要

In this paper a FinFET structure with channel region insulated from body by buried oxide (Body Over Insulator) is proposed. Body Over Insulator (BOI) FinFET has advantage over both Silicon Over Insulator (SOI) and Bulk FinFETs. Here, a comparative numerical study of a BOI FinFET, a bulk FinFET and a SOI FinFET is presented. The result have shown that, the proposed BOI FinFET has better short channel effect (SCE) suppression and a lower threshold voltage than bulk FinFET. Better heat dissipation capability by virtue of a smaller insulation, ease of fabrication and acceptable SCE suppression makes this structure a viable competitor of the SOI structure.