A buffered distributed spray MOCVD reactor design

摘要

We have developed a novel MOCVD reactor, which is called buffered distributed spray (BDS) MOCVD reactor, for the multiple wafer growth of films of III–V materials. In the present study, a fundamental and multi-field model based on the computational fluid dynamic (CFD) simulation of coupled flow, heat and mass transfer is presented to describe the epitaxial growth of gallium nitride (GaN). It is investigated how reactor geometry affects flow field, temperature profile, and concentration distribution. For comparison, a horizontal reactor with the same geometry is also modeled. The modeling results show that the BDS MOCVD reactor performs well in GaN growth.