Controlling graphene work function by doping in a MOCVD reactor

摘要

Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using tertiarybutylphosphine (TBP) and tertiarybutylarsene (TBA). Post process Raman spectroscopy confirmed the presence of a single layer of phosphor doped graphene (G/P) and Arsine doped graphene (G/As) when doped by TBP or by TBA, respectively. Blue shift of the 2D peak assured p-type doping. The work function determined by ultraviolet photoelectron spectroscopy varied from 4.5 eV for Pristine Graphene to 4.7, 4.8 eV for G/As, G/P, respectively. The increase of the work function is attributed to electron transfer from the graphene to the dopant. Our results suggest that doping graphene by MOCVD with TBA or TBP can easily and effectively alternate the work function by few tenths of eV and improve the electronic properties of graphene. The MOCVD technology of doping graphene opens a new route on which other semiconductors can be epitaxially grown on it in a continues process in the same MOCVD reactor.