A MOCVD REACTOR DESIGN FOR GAN-RELATED SEMICONDUCTOR CRYSTAL GROWTH

摘要

PURPOSE: A reaction furnace device for growing a crystal of GaN compound semiconductor is provided to prevent a natural convection caused by a temperature difference by introducing a heat plate cover made of copper on a heat plate made of black lead in a reaction furnace of a high-frequency induction heating type. CONSTITUTION: A circular-type orifice(20) sufficiently mixes a suction gas sucked up from three gas inlets through a pressure reduction. A gas current before reacting, passing through the orifice, becomes a warm current. A fine circular hole plate(21) induces a reaction gas on a heat plate under a current fluctuation state. A heat plate heats a sapphire by using a high-frequency induction heater. A heat plate cover(19) removes a flowing phenomenon of ammonia gas induced on a reactive pipe.