T- and Y-Branched Three-Terminal Junction Graphene Devices

摘要

Heteroepitaxial graphene on semiinsulating silicon carbide was used to fabricate nanoelectronic devices. T- and Y-branched graphene three-terminal junction devices were realized. Room temperature electrical measurements demonstrate pronounced nonlinear electrical properties of the devices. Voltage rectification at room temperature was observed. Increasing branch width reduces the curvature of the voltage rectification response curve of the three-terminal junctions.