首页> 外文OA文献 >Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer Phys. Rev. B 96, 235204 (2017)

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Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer Phys. Rev. B 96, 235204 (2017)

机译：错误：用具有超薄Mg插入层的Fe / Mg / MgO / Si隧道结旋转到三端垂直和四端子横向装置中的硅。 Rev. B 96,235204（2017）

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Shoichi Sato; Ryosho Nakane; Takato Hada; Masaaki Tanaka;
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1. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer (vol 96, 235204, 2017) [J] . Sato Shoichi, Nakane Ryosho, Hada Takato, Physical review, B . 2018,第19期

机译：用Fe / Mg / MgO / Si隧道连接的三端垂直和四端子横向装置中的硅旋转进入硅，具有超薄Mg插入层（Vol 96,235204,2017）
2. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [J] . Shoichi Sato, Ryosho Nakane, Takato Hada, Physical review . 2017,第23期

机译：在具有超薄Mg插入层的Fe / Mg / MgO / Si隧道结的三端子垂直和四端子横向器件中自旋注入硅中
3. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [J] . Shoichi Sato, Ryosho Nakane, Takato Hada, Physical Review. B, Condensed Matter . 2017,第23a24CD期

机译：用Fe / Mg / MgO / Si隧道连接的三端垂直和四端子横向装置中的硅旋转进入硅中，具有超薄Mg插入层
4. Spin-dependent current modulation in perovskite-oxide-based three-terminal magnetic tunnel junctions for the realization of vertical spin transistors [C] . Youhei Asahara, Le Duc Anh, Masaaki Tanaka, 応用物理学会学術講演会;応用物理学会 . 2020

机译：用于实现垂直自旋晶体管的基于钙钛矿的三端磁隧道结的旋转依赖电流调制
5. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure [O] . Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, 2016

机译：Co2Fe6B2上下自由层结构之间基于MgO的垂直-电磁-隧道-结自旋阀的隧道-磁阻比比较
6. Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer [O] . Sato, Shoichi, Nakane, Ryosho, Hada, Takato, 2017

机译：在三端垂直和四端子中自旋注入si 具有超薄mg的Fe / mg / mgO / si隧道结的横向器件插入层

Erratum: Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer Phys. Rev. B 96, 235204 (2017)

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